ZXMC3AM832TA parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

ZXMC3AM832TA

Description:

MOSFET N/P-CH 30V 2.9A/2.1A 8MLP

Stock:

30447

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.12

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Parameters

Current at 25 ° C - continuous drain (Id)

2.9A,2.1A

Drain source voltage (Vdss)

30V

FET Type

N and P Channel

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

3.9nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

190pF @ 25V

On resistance (maximum) for different Ids and Vgs

120 mΩ @ 2.5A,10V

Power - maximum

1.7W

Vgs (th) (maximum) for different Ids

1V @ 250µA(min)

packing

TR,CT,CT

series

working temperature

Encapsulation/Housing

8-VDFN Exposed Pad

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

ZXMC3AM832TA（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30447,Price reference "real-time change" China/Hongkong。 ZXMC3AM832TA package/specs, Download ZXMC3AM832TA、Datasheet。